AZ 9260 Spin/Bake/Expose

  1. Clean PR off mask (if needed):
    1. Acetone
    2. IPA
    3. DI SRD
    4. O2 RIE 3min 100 W Technics Etcher
    5. DI SRD again (so PR doesn’t stick to mask in contact mode)
  2. Clean and Dehydrate Si Wafer immediately prior to spinning
    1. O2 plasma 200W
    2. 2 min
    3. Technics RIE Etcher
  3. Spin 9260 CEE 200 Spinner
    1. Use chuck that is slightly smaller than substrate
    2. HMDS 3000 rpm 30 sec, ramp 2000 rpm/sec
    3. AZ 9260 3000rpm 60 sec, ramp 2000 rpm/sec
  4. Hot plate bake wafer 110C 3 min (Prebake)
  5. Let wafer sit in dark location for 1 hour or more to rehydrate (or it won’t develop properly)
  6. Suss Aligner
    1. Hard N2 contact
    2. 36 sec expose 7mW/cm^2 (~250 mJ/cm^2)
  7. Develop AZ400K:DI water 1:3.25 ~5 minutes, visually make sure everything is developed, add more time if needed
  8. DI rinse 2 min, then place inside spin rinse drier (SRD)
  9. Microscope inspection and measurements
  10. Hard bake wafer as needed 120 C 5 min(for wet etching, typically not necessary for RIE)