- Clean PR off mask (if needed):
- Acetone
- IPA
- DI SRD
- O2 RIE 3min 100 W Technics Etcher
- DI SRD again (so PR doesn’t stick to mask in contact mode)
- Clean and Dehydrate Si Wafer immediately prior to spinning
- O2 plasma 200W
- 2 min
- Technics RIE Etcher
- Spin CEE S1813 Spinner
- Use chuck that is slightly smaller than substrate
- HMDS 3000 rpm 30 sec, ramp 2000 rpm/s
- S1813 3000rpm 60 sec, ramp 2000 rpm/s
- Hot plate bake wafer 110C 1 min (Prebake)
- Suss Aligner
- Hard N2 contact
- 10 sec expose 7mW/cm^2 (~70 mJ/cm^2)
- Develop AZ 1:1 Developer 1 minute
- DI rinse 2 min, then place inside spin rinse drier (SRD)
- Microscope inspection and measurements