Shipley 1813 Photoresist Procedure

Film Deposition Parameters

Parameter

Setpoint

Spin Speed

3000 rpm

Spin Time

60 sec

Prebake Temperature 110 C

Prebake Time

60 sec (silicon wafer), 90 sec (glass substrate)

Exposure Dose

75 mJ/cm^2

Postbake Temperature (if necessary for wet etch)

120 C

Postbake Time

120 sec

 

Film Results

Parameter

Measurement Data

Film Thickness

2.2 um

Minimum Linewidth (using EV 420 Aligner, 75 mJ/cm^2)

 

Film Unifomity (across 4" wafer)

 

Film Index of Refraction

Wavelength (nm)

Index of Refraction (n)

400

 

500

 

600

 

650

 

700

 

800

 

900

 

  1. Clean Wafer, HF dip.
  2. Rinse and Dry wafer.
  3. Dehydration Bake wafer 150 C 10 minutes on wafer hotplate.
  4. HMDS vapor prime in YES oven.
  5. Use disposable plastic pipette to dispense 1 mL 1813 onto wafer.
  6. Spin at 3000 rpm for 60 seconds.
  7. Prebake on wafer hotplate at 110 C for 60 seconds.
  8. Expose on EV 420 for 7 seconds, or on Suss aligner for 14 seconds.
  9. Develop in AZ MIF 300 for 60 seconds.
  10. Rinse and dry wafer.
  11. Measure linewidth in optical microscope.
  12. Measure photoresist thickness with Tencor profilometer.
  13. Postbake if photoresist is to be used for wet etching mask.