Nanofab Standard Processes and Recipes
- DEPOSITION
- LPCVD
- Undoped Polysilicon
- Low Stress Silicon Rich Nitride
- Low Stress Silicon Rich Nitride
- Stoichiometric Nitride
- LTO (coming soon!)
- Doped Poly (coming soon!)
- PECVD
- SiO2
- Low Stress Silicon Nitride
- ALD
- Aluminum Oxide (Thermal)
- Aluminum Oxide (Plasma)
- Aluminum Nitride (Plasma)
- Thermal
- Wet/Dry SiO2
- N/P Diffusion
- CVD
- Parylene
- SPUTTER
- Al
- Ag
- Au
- Cr
- Cu
- Ir
- ITO
- Ni
- Pt
- Ti
- E-GUN
- Al
- Au
- Cr
- Cu
- Ti
- LPCVD
- ETCH
- DRIE
- Cryo Shallow Trench DRIE
- SF6:C4F8 Through-Wafer DRIE
- RIE
- Au Ar Etch
- ITO Ar Etch
- PR O2 Etch
- Parylene O2 Etch
- Si/PolySi SF6 Etch
- Nitride Etch
- Silicon Dioxide Etch
- DRY ETCH
- XeF2 Silicon Isotropic Etch
- WET ETCH
- Al Etch
- Au Etch
- Cr Etch
- Si KOH Etch 80 C Etch Rate = 1.1 um/min
- TMAH Si Etch 80 C
- SiO2 BOE Etch
- Piranha Clean
- RCA Clean
- DRIE
- PHOTOLITHOGRAPHY
- Pattern Generation
- 3, 4, 5, 7" masks, 3 um resolution PG, 2 um resolution IR
- Aligners
- Backside
- 2" - 6" Contact
- HMDS Vapor Prime
- Positive Photoresist
- Shipley 1813, 2 um thick, 2 um resolution
- AZ 9260, 10 um thick, 5 um resolution
- Liftoff Photoresist
- LOR 10B, 1 um thickness
- Negative Photoresist
- AZ NLOF 2020
- Developers
- Shipley 352
- AZ MIF 300
- SU8 Developer
- Strippers
- AZ Kwik Strip
- Pattern Generation
- PACKAGING AND BACK END PROCESS
- Dicing
- CMP
- Polysilicon
- SiO2
- Wire Bonding
- Al
- TEST/MEASURE
- Probe Station
- CV
- IV
- Optical Microscope
- Image Capture
- Measurement
- Probe Station