Nanofab Standard Processes and Recipes

  • DEPOSITION
    • LPCVD
    • PECVD
      • SiO2
      • Low Stress Silicon Nitride
    • ALD
      • Aluminum Oxide (Thermal)
      • Aluminum Oxide (Plasma)
      • Aluminum Nitride (Plasma)
    • Thermal
      • Wet/Dry SiO2
      • N/P Diffusion
    • CVD
      • Parylene
    • SPUTTER
      • Al
      • Ag
      • Au
      • Cr
      • Cu
      • Ir
      • ITO
      • Ni
      • Pt
      • Ti
    • E-GUN
      • Al
      • Au
      • Cr
      • Cu
      • Ti
  • ETCH
    • DRIE
      • Cryo Shallow Trench DRIE
      • SF6:C4F8 Through-Wafer DRIE
    • RIE
      • Au Ar Etch
      • ITO Ar Etch
      • PR O2 Etch
      • Parylene O2 Etch
      • Si/PolySi SF6 Etch
      • Nitride Etch
      • Silicon Dioxide Etch
    • DRY ETCH
      • XeF2 Silicon Isotropic Etch
    • WET ETCH
      • Al Etch
      • Au Etch
      • Cr Etch
      • Si KOH Etch 80 C Etch Rate = 1.1 um/min
      • TMAH Si Etch 80 C
      • SiO2 BOE Etch
      • Piranha Clean
      • RCA Clean
  • PHOTOLITHOGRAPHY
    • Pattern Generation
      • 3, 4, 5, 7" masks, 3 um resolution PG, 2 um resolution IR
    • Aligners
      • Backside
      • 2" - 6" Contact
    • HMDS Vapor Prime
    • Positive Photoresist
      • Shipley 1813, 2 um thick, 2 um resolution
      • AZ 9260, 10 um thick, 5 um resolution
    • Liftoff Photoresist
      • LOR 10B, 1 um thickness
    • Negative Photoresist
      • AZ NLOF 2020
    • Developers
      • Shipley 352
      • AZ MIF 300
      • SU8 Developer
    • Strippers
      • AZ Kwik Strip
  • PACKAGING AND BACK END PROCESS
    • Dicing
    • CMP
      • Polysilicon
      • SiO2
    • Wire Bonding
      • Al
  • TEST/MEASURE
    • Probe Station
      • CV
      • IV
    • Optical Microscope
      • Image Capture
      • Measurement